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2SC5171,Q(J

2SC5171,Q(J

2SC5171,Q(J

Toshiba Semiconductor and Storage

2SC5171,Q(J datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Toshiba Semiconductor and Storage stock available on our website

SOT-23

2SC5171,Q(J Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Operating Temperature 150°C TJ
Packaging Bulk
Published 2007
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Reach Compliance Code unknown
Power - Max 2W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA 5V
Current - Collector Cutoff (Max) 5μA ICBO
Vce Saturation (Max) @ Ib, Ic 1V @ 100mA, 1A
Voltage - Collector Emitter Breakdown (Max) 180V
Current - Collector (Ic) (Max) 2A
Frequency - Transition 200MHz
2SC5171,Q(J Product Details

2SC5171,Q(J Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 100mA 5V DC current gain.When VCE saturation is 1V @ 100mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Detection of Collector Emitter Breakdown at 180V maximal voltage is present.

2SC5171,Q(J Features


the DC current gain for this device is 100 @ 100mA 5V
the vce saturation(Max) is 1V @ 100mA, 1A

2SC5171,Q(J Applications


There are a lot of Toshiba Semiconductor and Storage 2SC5171,Q(J applications of single BJT transistors.

  • Driver
  • Interface
  • Muting
  • Inverter

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