2SC5171,Q(J datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Toshiba Semiconductor and Storage stock available on our website
SOT-23
2SC5171,Q(J Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Operating Temperature
150°C TJ
Packaging
Bulk
Published
2007
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Reach Compliance Code
unknown
Power - Max
2W
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 100mA 5V
Current - Collector Cutoff (Max)
5μA ICBO
Vce Saturation (Max) @ Ib, Ic
1V @ 100mA, 1A
Voltage - Collector Emitter Breakdown (Max)
180V
Current - Collector (Ic) (Max)
2A
Frequency - Transition
200MHz
2SC5171,Q(J Product Details
2SC5171,Q(J Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 100mA 5V DC current gain.When VCE saturation is 1V @ 100mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Detection of Collector Emitter Breakdown at 180V maximal voltage is present.
2SC5171,Q(J Features
the DC current gain for this device is 100 @ 100mA 5V the vce saturation(Max) is 1V @ 100mA, 1A
2SC5171,Q(J Applications
There are a lot of Toshiba Semiconductor and Storage 2SC5171,Q(J applications of single BJT transistors.