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2N4402TF

2N4402TF

2N4402TF

Rochester Electronics, LLC

2N4402TF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website

SOT-23

2N4402TF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Surface MountNO
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
JESD-609 Code e3
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish MATTE TIN
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) NOT APPLICABLE
[email protected] Reflow Temperature-Max (s) NOT APPLICABLE
Pin Count3
JESD-30 Code O-PBCY-T3
Qualification StatusCOMMERCIAL
Number of Elements 1
Configuration SINGLE
Power - Max 625mW
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 150mA 2V
Vce Saturation (Max) @ Ib, Ic 750mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 40V
Current - Collector (Ic) (Max) 600mA
Turn Off Time-Max (toff) 255ns
Turn On Time-Max (ton) 35ns
RoHS StatusROHS3 Compliant
In-Stock:1115 items

2N4402TF Product Details

2N4402TF Overview


This device has a DC current gain of 50 @ 150mA 2V, which is the ratio between the collector current and the base current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 750mV @ 50mA, 500mA.Single BJT transistor shows a 40V maximal voltage - Collector EmSingle BJT transistorter Breakdown.

2N4402TF Features


the DC current gain for this device is 50 @ 150mA 2V
the vce saturation(Max) is 750mV @ 50mA, 500mA

2N4402TF Applications


There are a lot of Rochester Electronics, LLC 2N4402TF applications of single BJT transistors.

  • Inverter
  • Driver
  • Muting
  • Interface

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