SS9011HBU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
SS9011HBU Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package
TO-92-3
Operating Temperature
150°C TJ
Packaging
Bulk
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
400mW
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
97 @ 1mA 5V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
300mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max)
30V
Current - Collector (Ic) (Max)
30mA
Frequency - Transition
2MHz
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.123956
$0.123956
10
$0.116939
$1.16939
100
$0.110320
$11.032
500
$0.104075
$52.0375
1000
$0.098184
$98.184
SS9011HBU Product Details
SS9011HBU Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 97 @ 1mA 5V.A VCE saturation (Max) of 300mV @ 1mA, 10mA means Ic has reached its maximum value(saturated).Product package TO-92-3 comes from the supplier.This device displays a 30V maximum voltage - Collector Emitter Breakdown.
SS9011HBU Features
the DC current gain for this device is 97 @ 1mA 5V the vce saturation(Max) is 300mV @ 1mA, 10mA the supplier device package of TO-92-3
SS9011HBU Applications
There are a lot of ON Semiconductor SS9011HBU applications of single BJT transistors.