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SS9011HBU

SS9011HBU

SS9011HBU

ON Semiconductor

SS9011HBU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

SS9011HBU Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package TO-92-3
Operating Temperature 150°C TJ
Packaging Bulk
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 400mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 97 @ 1mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max) 30V
Current - Collector (Ic) (Max) 30mA
Frequency - Transition 2MHz
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.123956 $0.123956
10 $0.116939 $1.16939
100 $0.110320 $11.032
500 $0.104075 $52.0375
1000 $0.098184 $98.184
SS9011HBU Product Details

SS9011HBU Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 97 @ 1mA 5V.A VCE saturation (Max) of 300mV @ 1mA, 10mA means Ic has reached its maximum value(saturated).Product package TO-92-3 comes from the supplier.This device displays a 30V maximum voltage - Collector Emitter Breakdown.

SS9011HBU Features


the DC current gain for this device is 97 @ 1mA 5V
the vce saturation(Max) is 300mV @ 1mA, 10mA
the supplier device package of TO-92-3

SS9011HBU Applications


There are a lot of ON Semiconductor SS9011HBU applications of single BJT transistors.

  • Interface
  • Driver
  • Inverter
  • Muting

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