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ZXTP25020DZTA

ZXTP25020DZTA

ZXTP25020DZTA

Diodes Incorporated

ZXTP25020DZTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

ZXTP25020DZTA Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 4
Weight 51.993025mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 4.46W
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Frequency 290MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number ZXTP25020D
Pin Count 3
JESD-30 Code R-PSSO-F3
Number of Elements 1
Element Configuration Single
Power Dissipation 4.46W
Case Connection COLLECTOR
Power - Max 2.4W
Transistor Application SWITCHING
Gain Bandwidth Product 290MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 20V
Max Collector Current 5A
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 10mA 2V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 265mV @ 500mA, 5A
Collector Emitter Breakdown Voltage 20V
Transition Frequency 290MHz
Collector Emitter Saturation Voltage -265mV
Max Breakdown Voltage 20V
Collector Base Voltage (VCBO) 25V
Emitter Base Voltage (VEBO) 7V
Height 1.6mm
Length 4.6mm
Width 2.6mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.966211 $0.966211
10 $0.911520 $9.1152
100 $0.859925 $85.9925
500 $0.811250 $405.625
1000 $0.765330 $765.33
ZXTP25020DZTA Product Details

ZXTP25020DZTA Overview


In this device, the DC current gain is 300 @ 10mA 2V, which is the ratio between the base current and the collector current.With a collector emitter saturation voltage of -265mV, it offers maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 265mV @ 500mA, 5A.The emitter base voltage can be kept at 7V for high efficiency.As you can see, the part has a transition frequency of 290MHz.There is a breakdown input voltage of 20V volts that it can take.Single BJT transistor is possible to have a collector current as low as 5A volts at Single BJT transistors maximum.

ZXTP25020DZTA Features


the DC current gain for this device is 300 @ 10mA 2V
a collector emitter saturation voltage of -265mV
the vce saturation(Max) is 265mV @ 500mA, 5A
the emitter base voltage is kept at 7V
a transition frequency of 290MHz

ZXTP25020DZTA Applications


There are a lot of Diodes Incorporated ZXTP25020DZTA applications of single BJT transistors.

  • Driver
  • Muting
  • Interface
  • Inverter

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