ZXTP25020DZTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
ZXTP25020DZTA Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Number of Pins
4
Weight
51.993025mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2007
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Max Power Dissipation
4.46W
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Frequency
290MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
ZXTP25020D
Pin Count
3
JESD-30 Code
R-PSSO-F3
Number of Elements
1
Element Configuration
Single
Power Dissipation
4.46W
Case Connection
COLLECTOR
Power - Max
2.4W
Transistor Application
SWITCHING
Gain Bandwidth Product
290MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
20V
Max Collector Current
5A
DC Current Gain (hFE) (Min) @ Ic, Vce
300 @ 10mA 2V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
265mV @ 500mA, 5A
Collector Emitter Breakdown Voltage
20V
Transition Frequency
290MHz
Collector Emitter Saturation Voltage
-265mV
Max Breakdown Voltage
20V
Collector Base Voltage (VCBO)
25V
Emitter Base Voltage (VEBO)
7V
Height
1.6mm
Length
4.6mm
Width
2.6mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.966211
$0.966211
10
$0.911520
$9.1152
100
$0.859925
$85.9925
500
$0.811250
$405.625
1000
$0.765330
$765.33
ZXTP25020DZTA Product Details
ZXTP25020DZTA Overview
In this device, the DC current gain is 300 @ 10mA 2V, which is the ratio between the base current and the collector current.With a collector emitter saturation voltage of -265mV, it offers maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 265mV @ 500mA, 5A.The emitter base voltage can be kept at 7V for high efficiency.As you can see, the part has a transition frequency of 290MHz.There is a breakdown input voltage of 20V volts that it can take.Single BJT transistor is possible to have a collector current as low as 5A volts at Single BJT transistors maximum.
ZXTP25020DZTA Features
the DC current gain for this device is 300 @ 10mA 2V a collector emitter saturation voltage of -265mV the vce saturation(Max) is 265mV @ 500mA, 5A the emitter base voltage is kept at 7V a transition frequency of 290MHz
ZXTP25020DZTA Applications
There are a lot of Diodes Incorporated ZXTP25020DZTA applications of single BJT transistors.