NSVBC856BM3T5G Overview

In this device, the DC current gain is 220 @ 2mA 5V, which is the ratio between the base current and the collector current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 650mV @ 5mA, 100mA.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.

NSVBC856BM3T5G Features

the DC current gain for this device is 220 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA

NSVBC856BM3T5G Applications

There are a lot of ON Semiconductor NSVBC856BM3T5G applications of single BJT transistors.

• Muting
• Interface
• Driver
• Inverter