IRF7705TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
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IRF7705TRPBF Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-TSSOP (0.173, 4.40mm Width)
Number of Pins
8
Supplier Device Package
8-TSSOP
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2008
Series
HEXFET®
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Termination
SMD/SMT
Resistance
18MOhm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Technology
MOSFET (Metal Oxide)
Number of Elements
2
Power Dissipation-Max
1.5W Ta
Power Dissipation
1.5W
Turn On Delay Time
18 ns
FET Type
P-Channel
Rds On (Max) @ Id, Vgs
18mOhm @ 8A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
2774pF @ 25V
Current - Continuous Drain (Id) @ 25°C
8A Tc
Gate Charge (Qg) (Max) @ Vgs
88nC @ 10V
Rise Time
35ns
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
128 ns
Turn-Off Delay Time
270 ns
Continuous Drain Current (ID)
-8A
Threshold Voltage
-2.5V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
-30V
Dual Supply Voltage
-30V
Input Capacitance
2.774nF
Drain to Source Resistance
30mOhm
Rds On Max
18 mΩ
Nominal Vgs
-2.5 V
Height
1.0414mm
Length
3.0988mm
Width
4.4958mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
Lead Free
Lead Free
IRF7705TRPBF Product Details
IRF7705TRPBF Description
IRF7705TRPBF is a kind of HEXFET? power MOSFET developed by Infineon Technologies. It is able to provide extremely low on-resistance per silicon area based on advanced processing techniques. This benefit together with the ruggedized device design makes this device suitable for battery and load management. Power MOSFET IRF7705TRPBF is available in the TSSOP-8 package, making it ideally suited for applications where printed circuit board space is at a premium.