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SIA430DJ-T4-GE3

SIA430DJ-T4-GE3

SIA430DJ-T4-GE3

Vishay Siliconix

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 13.5mOhm @ 7A, 10V ±20V 800pF @ 10V 18nC @ 10V 20V PowerPAK® SC-70-6

SOT-23

SIA430DJ-T4-GE3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case PowerPAK® SC-70-6
Supplier Device Package PowerPAK® SC-70-6 Single
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series TrenchFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 3.5W Ta 19.2W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 13.5mOhm @ 7A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 800pF @ 10V
Current - Continuous Drain (Id) @ 25°C 12A Ta 12A Tc
Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
RoHS Status ROHS3 Compliant
SIA430DJ-T4-GE3 Product Details

SIA430DJ-T4-GE3 Overview


The maximum input capacitance of this device is 800pF @ 10V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.The drain-to-source voltage (Vdss) of this transistor needs to be at 20V in order to operate.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.

SIA430DJ-T4-GE3 Features


a 20V drain to source voltage (Vdss)


SIA430DJ-T4-GE3 Applications


There are a lot of Vishay Siliconix
SIA430DJ-T4-GE3 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,

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