STD5407NT4G

new-10%

Manufacturer part number:STD5407NT4G

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 40V 7.6A DPAK

Case Package:SOT-23

Datasheet:STD5407NT4G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	24 Weeks
Lifecycle Status	CONSULT SALES OFFICE (Last Updated: 1 week ago)
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount	YES
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2013
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Pin Count	3
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	2.9W Ta 75W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.9W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	26m Ω @ 20A, 10V
Vgs(th) (Max) @ Id	3.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1000pF @ 32V
Current - Continuous Drain (Id) @ 25°C	7.6A Ta 38A Tc
Gate Charge (Qg) (Max) @ Vgs	20nC @ 10V
Drain to Source Voltage (Vdss)	40V
Drive Voltage (Max Rds On,Min Rds On)	5V 10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	7.6A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.026Ohm
Pulsed Drain Current-Max (IDM)	75A
DS Breakdown Voltage-Min	40V
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free