TIS75_D26Z datasheet pdf and Transistors - JFETs product details from ON Semiconductor stock available on our website
SOT-23
TIS75_D26Z Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Packaging
Tape & Reel (TR)
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
TIS75
Power - Max
350mW
FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
18pF @ 10V VGS
Current - Drain (Idss) @ Vds (Vgs=0)
8mA @ 15V
Voltage - Cutoff (VGS off) @ Id
800mV @ 4nA
Voltage - Breakdown (V(BR)GSS)
30V
Resistance - RDS(On)
60Ohm
TIS75_D26Z Product Details
TIS75_D26Z Description
TIS75_D26Z transistor is an N-channel MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes TIS75_D26Z MOSFET suitable for ISM applications in which reliability and durability are essential. ON Semiconductor TIS75_D26Z has the common source configuration.