DSA5G01B0L datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Panasonic Electronic Components stock available on our website
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DSA5G01B0L Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SC-85
Number of Pins
85
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2016
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Max Power Dissipation
150mW
Terminal Position
DUAL
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
DSA5G01
JESD-30 Code
R-PDSO-F3
Number of Elements
1
Polarity
NPN
Configuration
SINGLE
Transistor Application
AMPLIFIER
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
20V
Max Collector Current
30mA
DC Current Gain (hFE) (Min) @ Ic, Vce
70 @ 1mA 10V
Current - Collector Cutoff (Max)
100μA
Vce Saturation (Max) @ Ib, Ic
100mV @ 1mA, 10mA
Collector Emitter Breakdown Voltage
20V
Max Frequency
300MHz
Transition Frequency
300MHz
Collector Emitter Saturation Voltage
-100mV
Max Breakdown Voltage
20V
Frequency - Transition
300MHz
Collector Base Voltage (VCBO)
30V
Emitter Base Voltage (VEBO)
-5V
hFE Min
70
Continuous Collector Current
-30mA
Height
800μm
Length
2mm
Width
1.25mm
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
DSA5G01B0L Product Details
DSA5G01B0L Overview
This device has a DC current gain of 70 @ 1mA 10V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is -100mV, which allows for maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 100mV @ 1mA, 10mA.A -30mA continuous collector voltage is necessary to achieve high efficiency.Emitter base voltages of -5V can achieve high levels of efficiency.Single BJT transistor contains a transSingle BJT transistorion frequency of 300MHz.The breakdown input voltage is 20V volts.A maximum collector current of 30mA volts is possible.
DSA5G01B0L Features
the DC current gain for this device is 70 @ 1mA 10V a collector emitter saturation voltage of -100mV the vce saturation(Max) is 100mV @ 1mA, 10mA the emitter base voltage is kept at -5V a transition frequency of 300MHz
DSA5G01B0L Applications
There are a lot of Panasonic Electronic Components DSA5G01B0L applications of single BJT transistors.