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DSA5G01B0L

DSA5G01B0L

DSA5G01B0L

Panasonic Electronic Components

DSA5G01B0L datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Panasonic Electronic Components stock available on our website

SOT-23

DSA5G01B0L Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 10 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-85
Number of Pins 85
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2016
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Max Power Dissipation 150mW
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number DSA5G01
JESD-30 Code R-PDSO-F3
Number of Elements 1
Polarity NPN
Configuration SINGLE
Transistor Application AMPLIFIER
Transistor Type PNP
Collector Emitter Voltage (VCEO) 20V
Max Collector Current 30mA
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 1mA 10V
Current - Collector Cutoff (Max) 100μA
Vce Saturation (Max) @ Ib, Ic 100mV @ 1mA, 10mA
Collector Emitter Breakdown Voltage 20V
Max Frequency 300MHz
Transition Frequency 300MHz
Collector Emitter Saturation Voltage -100mV
Max Breakdown Voltage 20V
Frequency - Transition 300MHz
Collector Base Voltage (VCBO) 30V
Emitter Base Voltage (VEBO) -5V
hFE Min 70
Continuous Collector Current -30mA
Height 800μm
Length 2mm
Width 1.25mm
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
DSA5G01B0L Product Details

DSA5G01B0L Overview


This device has a DC current gain of 70 @ 1mA 10V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is -100mV, which allows for maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 100mV @ 1mA, 10mA.A -30mA continuous collector voltage is necessary to achieve high efficiency.Emitter base voltages of -5V can achieve high levels of efficiency.Single BJT transistor contains a transSingle BJT transistorion frequency of 300MHz.The breakdown input voltage is 20V volts.A maximum collector current of 30mA volts is possible.

DSA5G01B0L Features


the DC current gain for this device is 70 @ 1mA 10V
a collector emitter saturation voltage of -100mV
the vce saturation(Max) is 100mV @ 1mA, 10mA
the emitter base voltage is kept at -5V
a transition frequency of 300MHz

DSA5G01B0L Applications


There are a lot of Panasonic Electronic Components DSA5G01B0L applications of single BJT transistors.

  • Muting
  • Inverter
  • Driver
  • Interface

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