DSC5G02D0L datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Panasonic Electronic Components stock available on our website
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DSC5G02D0L Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SC-85
Number of Pins
85
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2011
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Max Power Dissipation
150mW
Terminal Position
DUAL
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
unknown
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
DSC5G02
JESD-30 Code
R-PDSO-F3
Number of Elements
1
Element Configuration
Single
Transistor Application
AMPLIFIER
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
20V
Max Collector Current
15mA
DC Current Gain (hFE) (Min) @ Ic, Vce
65 @ 1mA 6V
Collector Emitter Breakdown Voltage
20V
Max Frequency
650MHz
Transition Frequency
650MHz
Max Breakdown Voltage
20V
Frequency - Transition
650MHz
Collector Base Voltage (VCBO)
30V
Emitter Base Voltage (VEBO)
3V
Highest Frequency Band
VERY HIGH FREQUENCY B
Height
800μm
Length
2mm
Width
1.25mm
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
DSC5G02D0L Product Details
DSC5G02D0L Overview
DC current gain in this device equals 65 @ 1mA 6V, which is the ratio of the base current to the collector current.An emitter's base voltage can be kept at 3V to gain high efficiency.As you can see, the part has a transition frequency of 650MHz.The breakdown input voltage is 20V volts.A maximum collector current of 15mA volts is possible.
DSC5G02D0L Features
the DC current gain for this device is 65 @ 1mA 6V the emitter base voltage is kept at 3V a transition frequency of 650MHz
DSC5G02D0L Applications
There are a lot of Panasonic Electronic Components DSC5G02D0L applications of single BJT transistors.