DSC5G03S0L datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Panasonic Electronic Components stock available on our website
SOT-23
DSC5G03S0L Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SC-85
Number of Pins
85
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2010
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Max Power Dissipation
150mW
Terminal Position
DUAL
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
unknown
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PDSO-F3
Number of Elements
1
Element Configuration
Single
Transistor Application
AMPLIFIER
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
20V
Max Collector Current
50mA
DC Current Gain (hFE) (Min) @ Ic, Vce
25 @ 2mA 10V
Collector Emitter Breakdown Voltage
20V
Max Frequency
1.6GHz
Transition Frequency
800MHz
Max Breakdown Voltage
20V
Frequency - Transition
1.6GHz
Collector Base Voltage (VCBO)
30V
Emitter Base Voltage (VEBO)
3V
Highest Frequency Band
VERY HIGH FREQUENCY B
Height
800μm
Length
2mm
Width
1.25mm
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
DSC5G03S0L Product Details
DSC5G03S0L Overview
DC current gain in this device equals 25 @ 2mA 10V, which is the ratio of the base current to the collector current.The emitter base voltage can be kept at 3V for high efficiency.In the part, the transition frequency is 800MHz.As a result, it can handle voltages as low as 20V volts.During maximum operation, collector current can be as low as 50mA volts.
DSC5G03S0L Features
the DC current gain for this device is 25 @ 2mA 10V the emitter base voltage is kept at 3V a transition frequency of 800MHz
DSC5G03S0L Applications
There are a lot of Panasonic Electronic Components DSC5G03S0L applications of single BJT transistors.