DSC900100L Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 210 @ 2mA 10V.This design offers maximum flexibility with a collector emitter saturation voltage of 300mV.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 300mV @ 10mA, 100mA.Emitter base voltages of 7V can achieve high levels of efficiency.A transition frequency of 150MHz is present in the part.Single BJT transistor can take a breakdown input voltage of 50V volts.A maximum collector current of 100mA volts is possible.
DSC900100L Features
the DC current gain for this device is 210 @ 2mA 10V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at 7V
a transition frequency of 150MHz
DSC900100L Applications
There are a lot of Panasonic Electronic Components DSC900100L applications of single BJT transistors.
- Driver
- Muting
- Inverter
- Interface
