2SK2315TYTR-E

new-10%

Manufacturer part number:2SK2315TYTR-E

Manufacturer:Renesas Electronics America

Description:MOSFET N-CH 60V 2A 4-UPAK

Case Package:SOT-23

Datasheet:2SK2315TYTR-E Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-243AA
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tape & Reel (TR)
Published	2005
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Subcategory	FET General Purpose Power
Voltage - Rated DC	60V
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	260
Current Rating	2A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
JESD-30 Code	R-PSSO-F3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	1W Ta
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	450m Ω @ 1A, 4V
Input Capacitance (Ciss) (Max) @ Vds	173pF @ 10V
Current - Continuous Drain (Id) @ 25°C	2A Ta
Drive Voltage (Max Rds On,Min Rds On)	3V 4V
Vgs (Max)	±20V
Continuous Drain Current (ID)	2A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	2A
Drain-source On Resistance-Max	0.45Ohm
Pulsed Drain Current-Max (IDM)	4A
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free