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HAT1072H-EL-E

HAT1072H-EL-E

HAT1072H-EL-E

Renesas Electronics America

MOSFET P-CH 30V 40A LFPAK

SOT-23

HAT1072H-EL-E Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-100, SOT-669
Number of Pins 5
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2005
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Pin Count 5
JESD-30 Code R-PSSO-G4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 30W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 30W
Case Connection DRAIN
Turn On Delay Time 28 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.5m Ω @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds 9500pF @ 10V
Current - Continuous Drain (Id) @ 25°C 40A Ta
Gate Charge (Qg) (Max) @ Vgs 155nC @ 10V
Rise Time 60ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) +10V, -20V
Fall Time (Typ) 140 ns
Turn-Off Delay Time 305 ns
Continuous Drain Current (ID) 40A
Gate to Source Voltage (Vgs) 10V
Drain-source On Resistance-Max 0.0077Ohm
DS Breakdown Voltage-Min 30V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $3.598912 $3.598912
10 $3.395200 $33.952
100 $3.203019 $320.3019
500 $3.021716 $1510.858
1000 $2.850675 $2850.675

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