STW80NE06-10

new-10%

Manufacturer part number:STW80NE06-10

Manufacturer:STMicroelectronics

Description:MOSFET N-CH 60V 80A TO-247

Case Package:SOT-23

Datasheet:STW80NE06-10 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Transistor Element Material	SILICON
Operating Temperature	175°C TJ
Packaging	Tube
Series	STripFET™
JESD-609 Code	e0
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin/Lead (Sn/Pb)
Subcategory	FET General Purpose Power
Voltage - Rated DC	60V
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
Current Rating	80A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	STW80N
Pin Count	3
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	250W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	250W
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	10m Ω @ 40A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	7600pF @ 25V
Current - Continuous Drain (Id) @ 25°C	80A Tc
Gate Charge (Qg) (Max) @ Vgs	189nC @ 10V
Rise Time	150ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	75 ns
Continuous Drain Current (ID)	80A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.01Ohm
Drain to Source Breakdown Voltage	60V
Pulsed Drain Current-Max (IDM)	320A
Avalanche Energy Rating (Eas)	350 mJ
RoHS Status	Non-RoHS Compliant
Lead Free	Contains Lead