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AUIRF7478QTR

AUIRF7478QTR

AUIRF7478QTR

Infineon Technologies

MOSFET N-CH 60V 7A 8SOIC

SOT-23

AUIRF7478QTR Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 26 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Resistance 26MOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Configuration Single
Power Dissipation-Max 2.5W Ta
Power Dissipation 2.5W
Turn On Delay Time 7.7 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 26m Ω @ 4.2A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1740pF @ 25V
Current - Continuous Drain (Id) @ 25°C 7A Ta
Gate Charge (Qg) (Max) @ Vgs 31nC @ 4.5V
Rise Time 2.6ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 13 ns
Turn-Off Delay Time 44 ns
Continuous Drain Current (ID) 7A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 7A
Drain to Source Breakdown Voltage 60V
Height 1.5mm
Length 5mm
Width 4mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
4,000 $0.84185 $3.3674

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