RJH60D5BDPQ-E0#T2

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Manufacturer part number:RJH60D5BDPQ-E0#T2

Manufacturer:Renesas Electronics America

Description:IGBT 600V 75A 200W TO-247

Case Package:SOT-23

Datasheet:RJH60D5BDPQ-E0#T2 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Operating Temperature	150°C TJ
Packaging	Tube
Published	2017
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	200W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	RJH60D
Pin Count	3
Element Configuration	Single
Input Type	Standard
Power - Max	200W
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	2.2V
Max Collector Current	75A
Reverse Recovery Time	25 ns
Collector Emitter Breakdown Voltage	600V
Test Condition	300V, 37A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.2V @ 15V, 37A
IGBT Type	Trench
Gate Charge	78nC
Td (on/off) @ 25°C	50ns/130ns
Switching Energy	400μJ (on), 810μJ (off)
Gate-Emitter Thr Voltage-Max	6V
RoHS Status	ROHS3 Compliant