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RJH60D7DPM-00#T1

RJH60D7DPM-00#T1

RJH60D7DPM-00#T1

Renesas Electronics America

IGBT 600V 90A 55W TO3PFM

SOT-23

RJH60D7DPM-00#T1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3PFM, SC-93-3
Operating Temperature 150°C TJ
Packaging Tube
Published 2012
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 55W
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number RJH60D
Pin Count 3
Input Type Standard
Power - Max 55W
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.2V
Max Collector Current 90A
Reverse Recovery Time 100 ns
Collector Emitter Breakdown Voltage 600V
Test Condition 300V, 50A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 50A
IGBT Type Trench
Gate Charge 130nC
Td (on/off) @ 25°C 60ns/190ns
Switching Energy 1.1mJ (on), 600μJ (off)
Gate-Emitter Voltage-Max 30V
Gate-Emitter Thr Voltage-Max 6V
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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