NGTB40N65IHRWG Description

NGTB40N65IHRWG is a 650v IGBT with MonolithicReverse Conducting Diode. This Insulated Gate Bipolar Transistor (IGBT) NGTB40N65IHRWG features robust and cost-effective Field Stop (FS2) trench construction with a monolithic Diode. It provides a cost-effective solution for applications where diode losses are minimal. The IGBT NGTB40N65IHRWG is optimized for low conduction losses  (low  VCEsat) and is well suited for resonant or soft switching applications.

NGTB40N65IHRWG Features

Extremely Efficient Trench with Field stop Technology

Low Conduction Design for Soft Switching Application

Reduced Power Dissipation in Inducting Heating Application

Reliable and Cost-Effective Single Die Solution

This is a Pb?Free Device

NGTB40N65IHRWG Applications

Inductive Heating

Air Conditioning PFC

Welding

Automotive 

Infotainment & cluster 

Communications equipment