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RJK4532DPD-E0#J2

  • RJK4532DPD-E0#J2
  • RJK4532DPD-E0#J2

RJK4532DPD-E0#J2

RJK4532DPD-E0#J2

Renesas Electronics America

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 2.3 Ω @ 2A, 10V ±30V 280pF @ 25V 9nC @ 10V 450V TO-252-3, DPak (2 Leads + Tab), SC-63

SOT-23

RJK4532DPD-E0#J2 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature 150°C
Packaging Tape & Reel (TR)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 40.3W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.3 Ω @ 2A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 280pF @ 25V
Current - Continuous Drain (Id) @ 25°C 4A Ta
Gate Charge (Qg) (Max) @ Vgs 9nC @ 10V
Drain to Source Voltage (Vdss) 450V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
RJK4532DPD-E0#J2 Product Details

RJK4532DPD-E0#J2 Overview


The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 280pF @ 25V.Operating this transistor requires a 450V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

RJK4532DPD-E0#J2 Features


a 450V drain to source voltage (Vdss)


RJK4532DPD-E0#J2 Applications


There are a lot of Renesas Electronics America
RJK4532DPD-E0#J2 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools

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