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RJK6015DPM-00#T1

RJK6015DPM-00#T1

RJK6015DPM-00#T1

Renesas Electronics America

Trans MOSFET N-CH 600V 21A Tube

SOT-23

RJK6015DPM-00#T1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3PFM, SC-93-3
Operating Temperature 150°C TJ
Packaging Tube
Published 2012
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Number of Elements 1
Configuration Single
Power Dissipation-Max 60W Tc
Power Dissipation 60W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 360m Ω @ 10.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds 2600pF @ 25V
Current - Continuous Drain (Id) @ 25°C 21A Ta
Gate Charge (Qg) (Max) @ Vgs 67nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Continuous Drain Current (ID) 21A
Gate to Source Voltage (Vgs) 30V
RoHS Status ROHS3 Compliant

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