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2N4125BU

  • 2N4125BU
  • 2N4125BU

2N4125BU

2N4125BU

Rochester Electronics, LLC

2N4125BU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website

SOT-23

2N4125BU Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Bulk
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish MATTE TIN
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) NOT APPLICABLE
Reach Compliance Code unknown
[email protected] Reflow Temperature-Max (s) NOT APPLICABLE
Pin Count 3
JESD-30 Code O-PBCY-T3
Qualification Status COMMERCIAL
Number of Elements 1
Configuration SINGLE
Power - Max 625mW
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 2mA 1V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max) 30V
Current - Collector (Ic) (Max) 200mA
RoHS Status ROHS3 Compliant
2N4125BU Product Details

2N4125BU Overview


This device has a DC current gain of 50 @ 2mA 1V, which is the ratio between the collector current and the base current.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 5mA, 50mA.Detection of Collector Emitter Breakdown at 30V maximal voltage is present.

2N4125BU Features


the DC current gain for this device is 50 @ 2mA 1V
the vce saturation(Max) is 400mV @ 5mA, 50mA

2N4125BU Applications


There are a lot of Rochester Electronics, LLC 2N4125BU applications of single BJT transistors.

  • Driver
  • Inverter
  • Muting
  • Interface

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