MJL21195 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
MJL21195 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-264-3, TO-264AA
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
JESD-609 Code
e0
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
TIN LEAD
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
240
[email protected] Reflow Temperature-Max (s)
30
Pin Count
3
JESD-30 Code
R-PSFM-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Power - Max
200W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
25 @ 8A 5V
Current - Collector Cutoff (Max)
100μA
Vce Saturation (Max) @ Ib, Ic
4V @ 3.2A, 16A
Voltage - Collector Emitter Breakdown (Max)
250V
Current - Collector (Ic) (Max)
16A
Transition Frequency
4MHz
Frequency - Transition
4MHz
RoHS Status
Non-RoHS Compliant
MJL21195 Product Details
MJL21195 Overview
This device has a DC current gain of 25 @ 8A 5V, which is the ratio between the collector current and the base current.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 4V @ 3.2A, 16A.The part has a transition frequency of 4MHz.A 250V maximal voltage - Collector Emitter Breakdown is present in the device.
MJL21195 Features
the DC current gain for this device is 25 @ 8A 5V the vce saturation(Max) is 4V @ 3.2A, 16A a transition frequency of 4MHz
MJL21195 Applications
There are a lot of Rochester Electronics, LLC MJL21195 applications of single BJT transistors.