KSD401Y datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
KSD401Y Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220-3
Operating Temperature
150°C TJ
Packaging
Bulk
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
KSD401
Power - Max
25W
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 400mA 10V
Current - Collector Cutoff (Max)
50μA ICBO
Vce Saturation (Max) @ Ib, Ic
1V @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)
150V
Current - Collector (Ic) (Max)
2A
Frequency - Transition
5MHz
KSD401Y Product Details
KSD401Y Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 400mA 10V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 50mA, 500mA.Single BJT transistor comes in a supplier device package of TO-220-3.The device has a 150V maximal voltage - Collector Emitter Breakdown.
KSD401Y Features
the DC current gain for this device is 120 @ 400mA 10V the vce saturation(Max) is 1V @ 50mA, 500mA the supplier device package of TO-220-3
KSD401Y Applications
There are a lot of ON Semiconductor KSD401Y applications of single BJT transistors.