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KSD401Y

KSD401Y

KSD401Y

ON Semiconductor

KSD401Y datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

KSD401Y Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
Operating Temperature150°C TJ
PackagingBulk
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number KSD401
Power - Max 25W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 400mA 10V
Current - Collector Cutoff (Max) 50μA ICBO
Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 150V
Current - Collector (Ic) (Max) 2A
Frequency - Transition 5MHz
In-Stock:4257 items

KSD401Y Product Details

KSD401Y Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 400mA 10V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 50mA, 500mA.Single BJT transistor comes in a supplier device package of TO-220-3.The device has a 150V maximal voltage - Collector Emitter Breakdown.

KSD401Y Features


the DC current gain for this device is 120 @ 400mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
the supplier device package of TO-220-3

KSD401Y Applications


There are a lot of ON Semiconductor KSD401Y applications of single BJT transistors.

  • Inverter
  • Muting
  • Interface
  • Driver

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