2STA1962 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available on our website
SOT-23
2STA1962 Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Max Power Dissipation
130W
Frequency
30MHz
Base Part Number
2STA
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
130W
Power - Max
150W
Transistor Application
SWITCHING
Gain Bandwidth Product
30MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
230V
Max Collector Current
15A
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 1A 5V
Current - Collector Cutoff (Max)
5μA ICBO
Vce Saturation (Max) @ Ib, Ic
3V @ 800mA, 8A
Collector Emitter Breakdown Voltage
230V
Transition Frequency
30MHz
Collector Emitter Saturation Voltage
3V
Max Breakdown Voltage
230V
Collector Base Voltage (VCBO)
230V
Emitter Base Voltage (VEBO)
5V
hFE Min
80
Height
18.7mm
Length
15.8mm
Width
5mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.92000
$1.92
30
$1.51800
$45.54
120
$1.42883
$171.4596
2STA1962 Product Details
2STA1962 Overview
In this device, the DC current gain is 80 @ 1A 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 3V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 3V @ 800mA, 8A.With the emitter base voltage set at 5V, an efficient operation can be achieved.A transition frequency of 30MHz is present in the part.There is a breakdown input voltage of 230V volts that it can take.A maximum collector current of 15A volts is possible.
2STA1962 Features
the DC current gain for this device is 80 @ 1A 5V a collector emitter saturation voltage of 3V the vce saturation(Max) is 3V @ 800mA, 8A the emitter base voltage is kept at 5V a transition frequency of 30MHz
2STA1962 Applications
There are a lot of STMicroelectronics 2STA1962 applications of single BJT transistors.