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2SD1664T100P

2SD1664T100P

2SD1664T100P

ROHM Semiconductor

2SD1664T100P datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

2SD1664T100P Datasheet

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Specifications
Name Value
Type Parameter
Contact Plating Copper, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 1998
JESD-609 Code e2
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN COPPER
HTS Code 8541.21.00.75
Subcategory Other Transistors
Voltage - Rated DC 32V
Max Power Dissipation 2W
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Reach Compliance Code not_compliant
Current Rating 1A
[email protected] Reflow Temperature-Max (s) 10
Base Part Number 2SD1664
Pin Count 3
JESD-30 Code R-PSSO-F3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 150MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 32V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 82 @ 100mA 3V
Current - Collector Cutoff (Max) 500nA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage 32V
Transition Frequency 150MHz
Max Breakdown Voltage 32V
Collector Base Voltage (VCBO) 40V
Emitter Base Voltage (VEBO) 5V
hFE Min 82
VCEsat-Max 0.4 V
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.777154 $1.777154
10 $1.676560 $16.7656
100 $1.581660 $158.166
500 $1.492132 $746.066
1000 $1.407672 $1407.672
2SD1664T100P Product Details

2SD1664T100P Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 82 @ 100mA 3V.When VCE saturation is 400mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).The emitter base voltage can be kept at 5V for high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 1A current rating.Parts of this part have transition frequencies of 150MHz.Single BJT transistor can take a breakdown input voltage of 32V volts.When collector current reaches its maximum, it can reach 1A volts.

2SD1664T100P Features


the DC current gain for this device is 82 @ 100mA 3V
the vce saturation(Max) is 400mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 150MHz

2SD1664T100P Applications


There are a lot of ROHM Semiconductor 2SD1664T100P applications of single BJT transistors.

  • Driver
  • Interface
  • Inverter
  • Muting

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