2SD1664T100P datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
SOT-23
2SD1664T100P Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Contact Plating
Copper, Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
1998
JESD-609 Code
e2
Pbfree Code
yes
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
TIN COPPER
HTS Code
8541.21.00.75
Subcategory
Other Transistors
Voltage - Rated DC
32V
Max Power Dissipation
2W
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Reach Compliance Code
not_compliant
Current Rating
1A
[email protected] Reflow Temperature-Max (s)
10
Base Part Number
2SD1664
Pin Count
3
JESD-30 Code
R-PSSO-F3
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
150MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
32V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
82 @ 100mA 3V
Current - Collector Cutoff (Max)
500nA ICBO
Vce Saturation (Max) @ Ib, Ic
400mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
32V
Transition Frequency
150MHz
Max Breakdown Voltage
32V
Collector Base Voltage (VCBO)
40V
Emitter Base Voltage (VEBO)
5V
hFE Min
82
VCEsat-Max
0.4 V
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.777154
$1.777154
10
$1.676560
$16.7656
100
$1.581660
$158.166
500
$1.492132
$746.066
1000
$1.407672
$1407.672
2SD1664T100P Product Details
2SD1664T100P Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 82 @ 100mA 3V.When VCE saturation is 400mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).The emitter base voltage can be kept at 5V for high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 1A current rating.Parts of this part have transition frequencies of 150MHz.Single BJT transistor can take a breakdown input voltage of 32V volts.When collector current reaches its maximum, it can reach 1A volts.
2SD1664T100P Features
the DC current gain for this device is 82 @ 100mA 3V the vce saturation(Max) is 400mV @ 50mA, 500mA the emitter base voltage is kept at 5V the current rating of this device is 1A a transition frequency of 150MHz
2SD1664T100P Applications
There are a lot of ROHM Semiconductor 2SD1664T100P applications of single BJT transistors.