2SD1664T100P Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 82 @ 100mA 3V.When VCE saturation is 400mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).The emitter base voltage can be kept at 5V for high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 1A current rating.Parts of this part have transition frequencies of 150MHz.Single BJT transistor can take a breakdown input voltage of 32V volts.When collector current reaches its maximum, it can reach 1A volts.
2SD1664T100P Features
the DC current gain for this device is 82 @ 100mA 3V
the vce saturation(Max) is 400mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 150MHz
2SD1664T100P Applications
There are a lot of ROHM Semiconductor 2SD1664T100P applications of single BJT transistors.
- Driver
- Interface
- Inverter
- Muting
