KSC838COBU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
KSC838COBU Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Bulk
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
MATTE TIN
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
NOT APPLICABLE
Reach Compliance Code
unknown
[email protected] Reflow Temperature-Max (s)
NOT APPLICABLE
JESD-30 Code
O-PBCY-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Power - Max
250mW
Transistor Application
AMPLIFIER
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
70 @ 2mA 12V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
400mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max)
30V
Current - Collector (Ic) (Max)
30mA
Transition Frequency
250MHz
Frequency - Transition
250MHz
RoHS Status
ROHS3 Compliant
KSC838COBU Product Details
KSC838COBU Overview
This device has a DC current gain of 70 @ 2mA 12V, which is the ratio between the base current and the collector current.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.250MHz is present in the transition frequency.The device has a 30V maximal voltage - Collector Emitter Breakdown.
KSC838COBU Features
the DC current gain for this device is 70 @ 2mA 12V the vce saturation(Max) is 400mV @ 1mA, 10mA a transition frequency of 250MHz
KSC838COBU Applications
There are a lot of Rochester Electronics, LLC KSC838COBU applications of single BJT transistors.