DSA200200L datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Panasonic Electronic Components stock available on our website
SOT-23
DSA200200L Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2011
JESD-609 Code
e6
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Bismuth (Sn/Bi)
HTS Code
8541.21.00.75
Max Power Dissipation
200mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
unknown
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
DSA2002
Number of Elements
1
Element Configuration
Single
Transistor Application
AMPLIFIER
Gain Bandwidth Product
130MHz
Polarity/Channel Type
NPN
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
600mV
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 150mA 10V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
600mV @ 30mA, 300mA
Collector Emitter Breakdown Voltage
50V
Max Frequency
130MHz
Transition Frequency
160MHz
Collector Emitter Saturation Voltage
-600mV
Max Breakdown Voltage
50V
Collector Base Voltage (VCBO)
-60V
Emitter Base Voltage (VEBO)
-5V
hFE Min
120
Height
1.1mm
Length
2.9mm
Width
1.5mm
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.153259
$0.153259
10
$0.144584
$1.44584
100
$0.136400
$13.64
500
$0.128679
$64.3395
1000
$0.121396
$121.396
DSA200200L Product Details
DSA200200L Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 150mA 10V.This design offers maximum flexibility with a collector emitter saturation voltage of -600mV.A VCE saturation (Max) of 600mV @ 30mA, 300mA means Ic has reached its maximum value(saturated).Keeping the emitter base voltage at -5V can result in a high level of efficiency.Single BJT transistor contains a transSingle BJT transistorion frequency of 160MHz.This device can take an input voltage of 50V volts before it breaks down.When collector current reaches its maximum, it can reach 500mA volts.
DSA200200L Features
the DC current gain for this device is 120 @ 150mA 10V a collector emitter saturation voltage of -600mV the vce saturation(Max) is 600mV @ 30mA, 300mA the emitter base voltage is kept at -5V a transition frequency of 160MHz
DSA200200L Applications
There are a lot of Panasonic Electronic Components DSA200200L applications of single BJT transistors.