DSA200200L Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 150mA 10V.This design offers maximum flexibility with a collector emitter saturation voltage of -600mV.A VCE saturation (Max) of 600mV @ 30mA, 300mA means Ic has reached its maximum value(saturated).Keeping the emitter base voltage at -5V can result in a high level of efficiency.Single BJT transistor contains a transSingle BJT transistorion frequency of 160MHz.This device can take an input voltage of 50V volts before it breaks down.When collector current reaches its maximum, it can reach 500mA volts.
DSA200200L Features
the DC current gain for this device is 120 @ 150mA 10V
a collector emitter saturation voltage of -600mV
the vce saturation(Max) is 600mV @ 30mA, 300mA
the emitter base voltage is kept at -5V
a transition frequency of 160MHz
DSA200200L Applications
There are a lot of Panasonic Electronic Components DSA200200L applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
