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2N5551YTA

  • 2N5551YTA
  • 2N5551YTA

2N5551YTA

2N5551YTA

Rochester Electronics, LLC

2N5551YTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website

SOT-23

2N5551YTA Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Box (TB)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish NOT SPECIFIED
Terminal Position BOTTOM
JESD-30 Code O-PBCY-T3
Qualification Status COMMERCIAL
Number of Elements 1
Configuration SINGLE
Power - Max 625mW
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 180 @ 10mA 5V
Vce Saturation (Max) @ Ib, Ic 200mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max) 160V
Current - Collector (Ic) (Max) 600mA
Transition Frequency 100MHz
Frequency - Transition 100MHz
RoHS Status ROHS3 Compliant
2N5551YTA Product Details

2N5551YTA Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 180 @ 10mA 5V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 200mV @ 5mA, 50mA.100MHz is present in the transition frequency.There is a 160V maximal voltage in the device due to collector-emitter breakdown.

2N5551YTA Features


the DC current gain for this device is 180 @ 10mA 5V
the vce saturation(Max) is 200mV @ 5mA, 50mA
a transition frequency of 100MHz

2N5551YTA Applications


There are a lot of Rochester Electronics, LLC 2N5551YTA applications of single BJT transistors.

  • Inverter
  • Muting
  • Driver
  • Interface

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