2N5551YTA Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 180 @ 10mA 5V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 200mV @ 5mA, 50mA.100MHz is present in the transition frequency.There is a 160V maximal voltage in the device due to collector-emitter breakdown.
2N5551YTA Features
the DC current gain for this device is 180 @ 10mA 5V
the vce saturation(Max) is 200mV @ 5mA, 50mA
a transition frequency of 100MHz
2N5551YTA Applications
There are a lot of Rochester Electronics, LLC 2N5551YTA applications of single BJT transistors.
- Inverter
- Muting
- Driver
- Interface
