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2N6426G

  • 2N6426G
  • 2N6426G

2N6426G

2N6426G

Rochester Electronics, LLC

2N6426G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website

SOT-23

2N6426G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Bulk
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish TIN SILVER COPPER
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Pin Count 3
JESD-30 Code O-PBCY-T3
Qualification Status COMMERCIAL
Number of Elements 1
Power - Max 625mW
Polarity/Channel Type NPN
Transistor Type NPN - Darlington
DC Current Gain (hFE) (Min) @ Ic, Vce 30000 @ 100mA 5V
Current - Collector Cutoff (Max) 1μA
Vce Saturation (Max) @ Ib, Ic 1.5V @ 500μA, 500mA
Voltage - Collector Emitter Breakdown (Max) 40V
Current - Collector (Ic) (Max) 500mA
RoHS Status ROHS3 Compliant
2N6426G Product Details

2N6426G Overview


DC current gain in this device equals 30000 @ 100mA 5V, which is the ratio of the base current to the collector current.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.5V @ 500μA, 500mA.Detection of Collector Emitter Breakdown at 40V maximal voltage is present.

2N6426G Features


the DC current gain for this device is 30000 @ 100mA 5V
the vce saturation(Max) is 1.5V @ 500μA, 500mA

2N6426G Applications


There are a lot of Rochester Electronics, LLC 2N6426G applications of single BJT transistors.

  • Interface
  • Inverter
  • Driver
  • Muting

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