2SC5706-P-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
2SC5706-P-E Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package
TP
Packaging
Bulk
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Power - Max
800mW
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 500mA 2V
Current - Collector Cutoff (Max)
1μA ICBO
Vce Saturation (Max) @ Ib, Ic
240mV @ 100mA, 2A
Voltage - Collector Emitter Breakdown (Max)
100V
Current - Collector (Ic) (Max)
5A
Frequency - Transition
400MHz
RoHS Status
Non-RoHS Compliant
2SC5706-P-E Product Details
2SC5706-P-E Overview
This device has a DC current gain of 200 @ 500mA 2V, which is the ratio between the collector current and the base current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 240mV @ 100mA, 2A.Supplier package TP contains the product.Single BJT transistor shows a 100V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
2SC5706-P-E Features
the DC current gain for this device is 200 @ 500mA 2V the vce saturation(Max) is 240mV @ 100mA, 2A the supplier device package of TP
2SC5706-P-E Applications
There are a lot of Rochester Electronics, LLC 2SC5706-P-E applications of single BJT transistors.