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2SC5706-P-E

2SC5706-P-E

2SC5706-P-E

Rochester Electronics, LLC

2SC5706-P-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website

SOT-23

2SC5706-P-E Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package TP
Packaging Bulk
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Power - Max 800mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 500mA 2V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 240mV @ 100mA, 2A
Voltage - Collector Emitter Breakdown (Max) 100V
Current - Collector (Ic) (Max) 5A
Frequency - Transition 400MHz
RoHS Status Non-RoHS Compliant
2SC5706-P-E Product Details

2SC5706-P-E Overview


This device has a DC current gain of 200 @ 500mA 2V, which is the ratio between the collector current and the base current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 240mV @ 100mA, 2A.Supplier package TP contains the product.Single BJT transistor shows a 100V maximal voltage - Collector EmSingle BJT transistorter Breakdown.

2SC5706-P-E Features


the DC current gain for this device is 200 @ 500mA 2V
the vce saturation(Max) is 240mV @ 100mA, 2A
the supplier device package of TP

2SC5706-P-E Applications


There are a lot of Rochester Electronics, LLC 2SC5706-P-E applications of single BJT transistors.

  • Muting
  • Inverter
  • Driver
  • Interface

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