BC550BBU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
BC550BBU Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Bulk
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
MATTE TIN
Additional Feature
LOW NOISE
Terminal Position
BOTTOM
Terminal Form
WIRE
Peak Reflow Temperature (Cel)
NOT APPLICABLE
[email protected] Reflow Temperature-Max (s)
NOT APPLICABLE
Pin Count
3
JESD-30 Code
O-PBCY-W3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Case Connection
ISOLATED
Power - Max
500mW
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA ICBO
Vce Saturation (Max) @ Ib, Ic
600mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max)
45V
Current - Collector (Ic) (Max)
100mA
Transition Frequency
300MHz
Frequency - Transition
300MHz
RoHS Status
ROHS3 Compliant
BC550BBU Product Details
BC550BBU Overview
In this device, the DC current gain is 200 @ 2mA 5V, which is the ratio between the base current and the collector current.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 5mA, 100mA.Parts of this part have transition frequencies of 300MHz.Detection of Collector Emitter Breakdown at 45V maximal voltage is present.
BC550BBU Features
the DC current gain for this device is 200 @ 2mA 5V the vce saturation(Max) is 600mV @ 5mA, 100mA a transition frequency of 300MHz
BC550BBU Applications
There are a lot of Rochester Electronics, LLC BC550BBU applications of single BJT transistors.