BC638TF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
BC638TF Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
MATTE TIN
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
NOT APPLICABLE
[email protected] Reflow Temperature-Max (s)
NOT APPLICABLE
Pin Count
3
JESD-30 Code
O-PBCY-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Power - Max
1W
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 150mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)
60V
Current - Collector (Ic) (Max)
1A
Transition Frequency
100MHz
Frequency - Transition
100MHz
RoHS Status
ROHS3 Compliant
BC638TF Product Details
BC638TF Overview
DC current gain in this device equals 40 @ 150mA 2V, which is the ratio of the base current to the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 50mA, 500mA.The part has a transition frequency of 100MHz.This device displays a 60V maximum voltage - Collector Emitter Breakdown.
BC638TF Features
the DC current gain for this device is 40 @ 150mA 2V the vce saturation(Max) is 500mV @ 50mA, 500mA a transition frequency of 100MHz
BC638TF Applications
There are a lot of Rochester Electronics, LLC BC638TF applications of single BJT transistors.