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BC847CTT1G

  • BC847CTT1G
  • BC847CTT1G

BC847CTT1G

BC847CTT1G

Rochester Electronics, LLC

BC847CTT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website

SOT-23

BC847CTT1G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case SC-75, SOT-416
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish MATTE TIN
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Pin Count 3
JESD-30 Code R-PDSO-G3
Qualification Status COMMERCIAL
Number of Elements 1
Configuration SINGLE
Power - Max 200mW
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA 5V
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max) 45V
Current - Collector (Ic) (Max) 100mA
Transition Frequency 100MHz
Frequency - Transition 100MHz
RoHS Status ROHS3 Compliant
BC847CTT1G Product Details

BC847CTT1G Overview


This device has a DC current gain of 420 @ 2mA 5V, which is the ratio between the collector current and the base current.When VCE saturation is 600mV @ 5mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).There is a transition frequency of 100MHz in the part.This device displays a 45V maximum voltage - Collector Emitter Breakdown.

BC847CTT1G Features


the DC current gain for this device is 420 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
a transition frequency of 100MHz

BC847CTT1G Applications


There are a lot of Rochester Electronics, LLC BC847CTT1G applications of single BJT transistors.

  • Driver
  • Muting
  • Interface
  • Inverter

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