IRF710

new-10%

Manufacturer part number:IRF710

Manufacturer:Rochester Electronics, LLC

Description:N-CHANNEL POWER MOSFET

Case Package:SOT-23

Datasheet:IRF710 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	TO-220-3
Surface Mount	NO
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Reach Compliance Code	unknown
JESD-30 Code	R-PSFM-T3
Qualification Status	COMMERCIAL
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	36W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	3.6 Ω @ 1.2A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	170pF @ 25V
Current - Continuous Drain (Id) @ 25°C	2A Tc
Gate Charge (Qg) (Max) @ Vgs	17nC @ 10V
Drain to Source Voltage (Vdss)	400V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
JEDEC-95 Code	TO-220AB
Drain Current-Max (Abs) (ID)	2A
Pulsed Drain Current-Max (IDM)	5A
DS Breakdown Voltage-Min	400V
RoHS Status	Non-RoHS Compliant