IRFZ24STRRPBF

new-10%

Manufacturer part number:IRFZ24STRRPBF

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 60V 17A D2PAK

Case Package:SOT-23

Datasheet:IRFZ24STRRPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
HTS Code	8541.29.00.95
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Pin Count	4
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE
Power Dissipation-Max	3.7W Ta 60W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	13 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	100m Ω @ 10A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	640pF @ 25V
Current - Continuous Drain (Id) @ 25°C	17A Tc
Gate Charge (Qg) (Max) @ Vgs	25nC @ 10V
Rise Time	58ns
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	42 ns
Turn-Off Delay Time	25 ns
Continuous Drain Current (ID)	17A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.1Ohm
Pulsed Drain Current-Max (IDM)	68A
DS Breakdown Voltage-Min	60V
Avalanche Energy Rating (Eas)	100 mJ
Radiation Hardening	No
RoHS Status	ROHS3 Compliant