Welcome to Hotenda.com Online Store!

logo
userjoin
Home

IRF5210STRRPBF

IRF5210STRRPBF

IRF5210STRRPBF

Infineon Technologies

IRF5210STRRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRF5210STRRPBF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 10 Weeks
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
Series HEXFET®
JESD-609 Code e3
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 3.1W Ta 170W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 60m Ω @ 38A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2780pF @ 25V
Current - Continuous Drain (Id) @ 25°C 38A Tc
Gate Charge (Qg) (Max) @ Vgs 230nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 38A
Drain-source On Resistance-Max 0.06Ohm
Pulsed Drain Current-Max (IDM) 140A
DS Breakdown Voltage-Min 100V
Avalanche Energy Rating (Eas) 120 mJ
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
800 $1.35999 $1087.992
IRF5210STRRPBF Product Details

IRF5210STRRPBF Description

 

IRF5210STRRPBF MOSFET is a family of high-voltage MOSFETs built on a planar stripe with DMOS. IRF5210STRRPBF P-Channel MOSFET is designed to improve the overall efficiency of DC/DC converters. IRF5210STRRPBF Infineon Technologies is ideal for Battery Charging Circuit, Motor Drives, as well as Uninterruptible Power Suppliess.

 

 

IRF5210STRRPBF Features

 

Silicon optimized for applications

Optimized for broadest availability from distribution partners

Capable of being wave-soldered

Industry standard surface-mount power package

High-current carrying capability package

 

 

IRF5210STRRPBF Applications

 

Battery Charging Circuit

Motor Drives

Uninterruptible Power Supplies


Related Part Number

Get Subscriber

Enter Your Email Address, Get the Latest News