KSA1015GRBU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
KSA1015GRBU Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Bulk
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
MATTE TIN
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
NOT APPLICABLE
[email protected] Reflow Temperature-Max (s)
NOT APPLICABLE
JESD-30 Code
O-PBCY-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Power - Max
400mW
Transistor Application
AMPLIFIER
Polarity/Channel Type
PNP
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 2mA 6V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
300mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max)
50V
Current - Collector (Ic) (Max)
150mA
Transition Frequency
80MHz
Frequency - Transition
80MHz
RoHS Status
ROHS3 Compliant
KSA1015GRBU Product Details
KSA1015GRBU Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 2mA 6V.A VCE saturation (Max) of 300mV @ 10mA, 100mA means Ic has reached its maximum value(saturated).The part has a transition frequency of 80MHz.There is a 50V maximal voltage in the device due to collector-emitter breakdown.
KSA1015GRBU Features
the DC current gain for this device is 200 @ 2mA 6V the vce saturation(Max) is 300mV @ 10mA, 100mA a transition frequency of 80MHz
KSA1015GRBU Applications
There are a lot of Rochester Electronics, LLC KSA1015GRBU applications of single BJT transistors.