2SB1241TV2R Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 180 @ 100mA 3V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 400mV @ 50mA, 500mA.An emitter's base voltage can be kept at 5V to gain high efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-1A).Single BJT transistor can be broken down at a voltage of 80V volts.There is a 80V maximal voltage in the device due to collector-emitter breakdown.The maximum collector current is 3A volts.
2SB1241TV2R Features
the DC current gain for this device is 180 @ 100mA 3V
the vce saturation(Max) is 400mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -1A
2SB1241TV2R Applications
There are a lot of ROHM Semiconductor 2SB1241TV2R applications of single BJT transistors.
- Driver
- Interface
- Muting
- Inverter
