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2SB1241TV2R

2SB1241TV2R

2SB1241TV2R

ROHM Semiconductor

2SB1241TV2R datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

2SB1241TV2R Datasheet

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Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case 3-SIP
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Box (TB)
Published 2009
JESD-609 Code e1
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish TIN SILVER COPPER
Subcategory Other Transistors
Voltage - Rated DC -80V
Max Power Dissipation 1W
Peak Reflow Temperature (Cel) 260
Current Rating -1A
[email protected] Reflow Temperature-Max (s) 10
Base Part Number 2SB1241
Pin Count 3
JESD-30 Code R-PSIP-T3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Transistor Application SWITCHING
Gain Bandwidth Product 100MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 1V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 180 @ 100mA 3V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage 50V
Voltage - Collector Emitter Breakdown (Max) 80V
Current - Collector (Ic) (Max) 1A
Max Breakdown Voltage 80V
Collector Base Voltage (VCBO) -80V
Emitter Base Voltage (VEBO) 5V
hFE Min 180
RoHS Status ROHS3 Compliant
Lead Free Lead Free
2SB1241TV2R Product Details

2SB1241TV2R Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 180 @ 100mA 3V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 400mV @ 50mA, 500mA.An emitter's base voltage can be kept at 5V to gain high efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-1A).Single BJT transistor can be broken down at a voltage of 80V volts.There is a 80V maximal voltage in the device due to collector-emitter breakdown.The maximum collector current is 3A volts.

2SB1241TV2R Features


the DC current gain for this device is 180 @ 100mA 3V
the vce saturation(Max) is 400mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -1A

2SB1241TV2R Applications


There are a lot of ROHM Semiconductor 2SB1241TV2R applications of single BJT transistors.

  • Driver
  • Interface
  • Muting
  • Inverter

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