2SB1241TV2R datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
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2SB1241TV2R Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
3-SIP
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Box (TB)
Published
2009
JESD-609 Code
e1
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
TIN SILVER COPPER
Subcategory
Other Transistors
Voltage - Rated DC
-80V
Max Power Dissipation
1W
Peak Reflow Temperature (Cel)
260
Current Rating
-1A
[email protected] Reflow Temperature-Max (s)
10
Base Part Number
2SB1241
Pin Count
3
JESD-30 Code
R-PSIP-T3
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Transistor Application
SWITCHING
Gain Bandwidth Product
100MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
1V
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
180 @ 100mA 3V
Current - Collector Cutoff (Max)
1μA ICBO
Vce Saturation (Max) @ Ib, Ic
400mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
50V
Voltage - Collector Emitter Breakdown (Max)
80V
Current - Collector (Ic) (Max)
1A
Max Breakdown Voltage
80V
Collector Base Voltage (VCBO)
-80V
Emitter Base Voltage (VEBO)
5V
hFE Min
180
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
2SB1241TV2R Product Details
2SB1241TV2R Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 180 @ 100mA 3V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 400mV @ 50mA, 500mA.An emitter's base voltage can be kept at 5V to gain high efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-1A).Single BJT transistor can be broken down at a voltage of 80V volts.There is a 80V maximal voltage in the device due to collector-emitter breakdown.The maximum collector current is 3A volts.
2SB1241TV2R Features
the DC current gain for this device is 180 @ 100mA 3V the vce saturation(Max) is 400mV @ 50mA, 500mA the emitter base voltage is kept at 5V the current rating of this device is -1A
2SB1241TV2R Applications
There are a lot of ROHM Semiconductor 2SB1241TV2R applications of single BJT transistors.