2N5551RLRAG Overview
DC current gain in this device equals 80 @ 10mA 5V, which is the ratio of the base current to the collector current.A VCE saturation (Max) of 200mV @ 5mA, 50mA means Ic has reached its maximum value(saturated).100MHz is present in the transition frequency.The device has a 160V maximal voltage - Collector Emitter Breakdown.
2N5551RLRAG Features
the DC current gain for this device is 80 @ 10mA 5V
the vce saturation(Max) is 200mV @ 5mA, 50mA
a transition frequency of 100MHz
2N5551RLRAG Applications
There are a lot of Rochester Electronics, LLC 2N5551RLRAG applications of single BJT transistors.
- Driver
- Inverter
- Muting
- Interface
