2SB1132T100Q Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 100mA 3V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 50mA, 500mA.Maintaining the continuous collector voltage at -1A is essential for high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -1A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 150MHz.Input voltage breakdown is available at 32V volts.During maximum operation, collector current can be as low as 1A volts.

2SB1132T100Q Features

the DC current gain for this device is 120 @ 100mA 3V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -1A
a transition frequency of 150MHz

2SB1132T100Q Applications

There are a lot of ROHM Semiconductor 2SB1132T100Q applications of single BJT transistors.

• Driver
• Interface
• Inverter
• Muting