BD536 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available on our website
SOT-23
BD536 Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
-60V
Max Power Dissipation
50W
Current Rating
-8A
Base Part Number
BD536
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
50W
Transistor Application
SWITCHING
Gain Bandwidth Product
12MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
8A
DC Current Gain (hFE) (Min) @ Ic, Vce
25 @ 2A 2V
Current - Collector Cutoff (Max)
100μA
Vce Saturation (Max) @ Ib, Ic
800mV @ 600mA, 6A
Collector Emitter Breakdown Voltage
60V
Transition Frequency
12MHz
Collector Emitter Saturation Voltage
800mV
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
5V
hFE Min
20
VCEsat-Max
0.8 V
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
BD536 Product Details
BD536 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 25 @ 2A 2V.The collector emitter saturation voltage is 800mV, giving you a wide variety of design options.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.Its current rating is -8A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.A transition frequency of 12MHz is present in the part.During maximum operation, collector current can be as low as 8A volts.
BD536 Features
the DC current gain for this device is 25 @ 2A 2V a collector emitter saturation voltage of 800mV the vce saturation(Max) is 800mV @ 600mA, 6A the emitter base voltage is kept at 5V the current rating of this device is -8A a transition frequency of 12MHz
BD536 Applications
There are a lot of STMicroelectronics BD536 applications of single BJT transistors.