KSD5018TU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
KSD5018TU Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
MATTE TIN
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT APPLICABLE
Reach Compliance Code
unknown
[email protected] Reflow Temperature-Max (s)
NOT APPLICABLE
Pin Count
3
JESD-30 Code
R-PSFM-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
DARLINGTON WITH BUILT-IN RESISTOR
Power - Max
40W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN - Darlington
Current - Collector Cutoff (Max)
1mA
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
1.5V @ 20mA, 3A
Voltage - Collector Emitter Breakdown (Max)
275V
Current - Collector (Ic) (Max)
4A
RoHS Status
ROHS3 Compliant
KSD5018TU Product Details
KSD5018TU Overview
Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 20mA, 3A.Single BJT transistor shows a 275V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
KSD5018TU Features
the vce saturation(Max) is 1.5V @ 20mA, 3A
KSD5018TU Applications
There are a lot of Rochester Electronics, LLC KSD5018TU applications of single BJT transistors.