KSE5020S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
KSE5020S Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Bulk
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
MATTE TIN
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
unknown
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PSFM-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Power - Max
30W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
15 @ 300mA 5V
Current - Collector Cutoff (Max)
10μA ICBO
Vce Saturation (Max) @ Ib, Ic
1V @ 300mA, 1.5A
Voltage - Collector Emitter Breakdown (Max)
500V
Current - Collector (Ic) (Max)
3A
Transition Frequency
18MHz
Frequency - Transition
18MHz
RoHS Status
ROHS3 Compliant
KSE5020S Product Details
KSE5020S Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 15 @ 300mA 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1V @ 300mA, 1.5A.In this part, there is a transition frequency of 18MHz.There is a 500V maximal voltage in the device due to collector-emitter breakdown.
KSE5020S Features
the DC current gain for this device is 15 @ 300mA 5V the vce saturation(Max) is 1V @ 300mA, 1.5A a transition frequency of 18MHz
KSE5020S Applications
There are a lot of Rochester Electronics, LLC KSE5020S applications of single BJT transistors.