MJ14002 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
MJ14002 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-204AE
Surface Mount
NO
Transistor Element Material
SILICON
Packaging
Tray
JESD-609 Code
e0
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Number of Terminations
2
Terminal Finish
TIN LEAD
Terminal Position
BOTTOM
Terminal Form
PIN/PEG
Peak Reflow Temperature (Cel)
240
[email protected] Reflow Temperature-Max (s)
30
Pin Count
2
JESD-30 Code
O-MBFM-P2
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Power - Max
300W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
15 @ 50A 3V
Current - Collector Cutoff (Max)
1mA
JEDEC-95 Code
TO-204AA
Vce Saturation (Max) @ Ib, Ic
1V @ 2.5A, 25A
Voltage - Collector Emitter Breakdown (Max)
80V
Current - Collector (Ic) (Max)
60A
RoHS Status
Non-RoHS Compliant
MJ14002 Product Details
MJ14002 Overview
In this device, the DC current gain is 15 @ 50A 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 2.5A, 25A.A 80V maximal voltage - Collector Emitter Breakdown is present in the device.
MJ14002 Features
the DC current gain for this device is 15 @ 50A 3V the vce saturation(Max) is 1V @ 2.5A, 25A
MJ14002 Applications
There are a lot of Rochester Electronics, LLC MJ14002 applications of single BJT transistors.