2SA1930(Q,M)

new-10%

Manufacturer part number:2SA1930(Q,M)

Manufacturer:Toshiba Semiconductor and Storage

Description:TRANS PNP 180V 2A TO220NIS

Case Package:SOT-23

Datasheet:2SA1930(Q,M) Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Contact Plating	Copper, Silver, Tin
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Operating Temperature	150°C TJ
Packaging	Bulk
Published	2007
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Power Dissipation	2W
Frequency	200MHz
Number of Elements	1
Element Configuration	Single
Power Dissipation	20W
Power - Max	2W
Gain Bandwidth Product	200MHz
Transistor Type	PNP
Collector Emitter Voltage (VCEO)	180V
Max Collector Current	2A
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 100mA 5V
Current - Collector Cutoff (Max)	5μA ICBO
Vce Saturation (Max) @ Ib, Ic	1V @ 100mA, 1A
Collector Emitter Breakdown Voltage	180V
Collector Base Voltage (VCBO)	180V
Emitter Base Voltage (VEBO)	5V
hFE Min	50
RoHS Status	RoHS Compliant
Lead Free	Lead Free