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MJD44E3T4

  • MJD44E3T4
  • MJD44E3T4

MJD44E3T4

MJD44E3T4

Rochester Electronics, LLC

MJD44E3T4 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website

SOT-23

MJD44E3T4 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish TIN LEAD
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 240
[email protected] Reflow Temperature-Max (s) 30
Pin Count 3
JESD-30 Code R-PSSO-G2
Qualification Status COMMERCIAL
Number of Elements 1
Case Connection COLLECTOR
Power - Max 20W
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN - Darlington
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 5A 5V
Current - Collector Cutoff (Max) 10μA
Vce Saturation (Max) @ Ib, Ic 1.5V @ 10mA, 5A
Voltage - Collector Emitter Breakdown (Max) 80V
Current - Collector (Ic) (Max) 10A
RoHS Status Non-RoHS Compliant
MJD44E3T4 Product Details

MJD44E3T4 Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 1000 @ 5A 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.5V @ 10mA, 5A.A 80V maximal voltage - Collector Emitter Breakdown is present in the device.

MJD44E3T4 Features


the DC current gain for this device is 1000 @ 5A 5V
the vce saturation(Max) is 1.5V @ 10mA, 5A

MJD44E3T4 Applications


There are a lot of Rochester Electronics, LLC MJD44E3T4 applications of single BJT transistors.

  • Interface
  • Driver
  • Inverter
  • Muting

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