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MPSW63G

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  • MPSW63G

MPSW63G

MPSW63G

Rochester Electronics, LLC

MPSW63G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website

SOT-23

MPSW63G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 Long Body
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Bulk
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish TIN SILVER COPPER
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Pin Count 3
JESD-30 Code O-PBCY-T3
Qualification Status COMMERCIAL
Number of Elements 1
Power - Max 1W
Polarity/Channel Type PNP
Transistor Type PNP - Darlington
DC Current Gain (hFE) (Min) @ Ic, Vce 10000 @ 100mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 1.5V @ 100μA, 100mA
Voltage - Collector Emitter Breakdown (Max) 30V
Current - Collector (Ic) (Max) 500mA
Transition Frequency 125MHz
Frequency - Transition 125MHz
RoHS Status ROHS3 Compliant
MPSW63G Product Details

MPSW63G Overview


DC current gain in this device equals 10000 @ 100mA 5V, which is the ratio of the base current to the collector current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.5V @ 100μA, 100mA.As a result, the part has a transition frequency of 125MHz.There is a 30V maximal voltage in the device due to collector-emitter breakdown.

MPSW63G Features


the DC current gain for this device is 10000 @ 100mA 5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
a transition frequency of 125MHz

MPSW63G Applications


There are a lot of Rochester Electronics, LLC MPSW63G applications of single BJT transistors.

  • Driver
  • Muting
  • Inverter
  • Interface

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