BD682T datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
BD682T Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Surface Mount
NO
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2008
JESD-609 Code
e0
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Subcategory
Other Transistors
Voltage - Rated DC
-100V
Max Power Dissipation
40W
Peak Reflow Temperature (Cel)
240
Reach Compliance Code
not_compliant
Current Rating
-4A
[email protected] Reflow Temperature-Max (s)
30
Base Part Number
BD682
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Polarity
PNP
Element Configuration
Single
Power Dissipation
40W
Transistor Application
AMPLIFIER
Transistor Type
PNP - Darlington
Collector Emitter Voltage (VCEO)
100V
Max Collector Current
4A
DC Current Gain (hFE) (Min) @ Ic, Vce
750 @ 1.5A 3V
Current - Collector Cutoff (Max)
500μA
Vce Saturation (Max) @ Ib, Ic
2.5V @ 30mA, 1.5A
Collector Emitter Breakdown Voltage
100V
Transition Frequency
10MHz
Collector Base Voltage (VCBO)
100V
Emitter Base Voltage (VEBO)
5V
hFE Min
750
Continuous Collector Current
4A
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead
BD682T Product Details
BD682T Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 750 @ 1.5A 3V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 2.5V @ 30mA, 1.5A.Single BJT transistor is recommended to keep the continuous collector voltage at 4A in order to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -4A current rating.The part has a transition frequency of 10MHz.Single BJT transistor is possible for the collector current to fall as low as 4A volts at Single BJT transistors maximum.
BD682T Features
the DC current gain for this device is 750 @ 1.5A 3V the vce saturation(Max) is 2.5V @ 30mA, 1.5A the emitter base voltage is kept at 5V the current rating of this device is -4A a transition frequency of 10MHz
BD682T Applications
There are a lot of ON Semiconductor BD682T applications of single BJT transistors.